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| Excelics PRELIMINARY DATA SHEET * * * * * * +38.5dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 240mA PER BIN RANGE ' ' EPA960B High Efficiency Heterojunction Power FET ' ' 6 * 6 * 6 * 6 * 6 Chip Thickness: 50 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f= 2GHz f= 4GHz f= 2GHz f= 4GHz MIN 37.0 17.0 1760 1920 TYP 38.5 38.5 18.5 13.5 2880 3120 -1.0 -11 -7 -15 -14 5 o MAX UNIT dBm dB Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=28mA 3760 mA mS -2.5 V V V C/W Drain Breakdown Voltage Igd=9.6mA Source Breakdown Voltage Igs=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Gate-Source Voltage -8V -3V Drain Current Idss 2.8A Ids Forward Gate Current 480mA 80mA Igsf Input Power 36dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 27 W 23 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA960B PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.959 -155.9 0.957 -168.7 0.957 -173.4 0.958 -176.1 0.958 -177.9 0.959 -179.4 0.960 179.4 0.961 178.4 0.961 177.4 0.962 176.5 0.963 175.6 0.964 174.8 0.965 174.0 0.966 173.2 0.966 172.4 0.967 171.7 0.968 170.9 0.968 170.2 0.969 169.4 0.970 168.7 8V, 1/2 Idss --- S21 --MAG ANG 9.081 98.1 4.601 88.2 3.060 82.3 2.280 77.5 1.807 73.2 1.489 69.1 1.260 65.3 1.087 61.7 0.951 58.3 0.842 55.0 0.752 52.0 0.677 49.1 0.614 46.4 0.559 43.8 0.512 41.5 0.472 39.3 0.436 37.3 0.404 35.4 0.376 33.8 0.351 32.2 --- S12 --MAG ANG 0.013 18.6 0.014 19.1 0.014 23.6 0.015 29.0 0.015 34.7 0.016 40.2 0.017 45.4 0.019 50.1 0.020 54.3 0.022 57.8 0.024 60.8 0.026 63.3 0.028 65.2 0.030 66.8 0.033 67.9 0.035 68.8 0.038 69.4 0.040 69.8 0.043 70.0 0.046 70.0 --- S22 --MAG ANG 0.607 -173.3 0.618 -175.4 0.626 -175.7 0.636 -175.7 0.647 -175.6 0.659 -175.6 0.673 -175.8 0.687 -176.1 0.702 -176.5 0.716 -177.1 0.731 -177.8 0.746 -178.6 0.759 -179.5 0.773 179.6 0.786 178.5 0.798 177.4 0.809 176.3 0.820 175.1 0.830 173.9 0.840 172.7 The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each. |
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